首页 >2SK184-Y>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconNChannelJunctionTypeLowNoiseAudioAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NCHANNELJUNCTIONTYPE(LOWNOISEAUDIOAMPLIFIERAPPLICATIONS) LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LowNoiseAudioAmplifierApplications LowNoiseAudioAmplifierApplications •High|Yfs|:|Yfs|=15mS(typ.)(VDS=10V,VGS=0) •Highbreakdownvoltage:VGDS=−50V •Lownoise:NF=1.0dB(typ.) (VDS=10V,ID=0.5mA,f=1kHz,RG=1kΩ) •Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) •S | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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