Fast Switching Speed

DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Power supplies, converters and power motor controls

文件：66 Kbytes 页数：2 Pages

ISC

无锡固电

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：81.01 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Meets radial taping.

文件：78.67 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

N-Channel Silicon MOSFET Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

文件：81.21 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Meets radial taping.

文件：78.38 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：82.09 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Meets radial taping.

文件：77.16 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

ONSEMI

安森美半导体

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体