2SJ621中文资料瑞萨数据手册PDF规格书

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SJ621 is a switching device which can be driven directly

by a 1.8 V power source.

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• 1.8 V drive available

• Low on-state resistance

RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)

RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A)

RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)

RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)