首页 >2SJ610(T6L1TLT1,NQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SwitchingRegulator SwitchingRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.85Ω(typ.) •Highforwardtransferadmittance:|Yfs|=18S(typ.) •Lowleakagecurrent:IDSS=−100μA(VDS=−250V) •Enhancementmode:Vth=−1.5to−3.5V(VDS=10V,ID=1 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconP-ChannelMOSTypeSwitchingRegulator,DC/DCConverterandMotorDriveApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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