2SJ606-S中文资料瑞萨数据手册PDF规格书

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

The 2SJ606 is P-channel MOS Field Effect Transistor designed

for high current switching applications.

FEATURES

• Super low on-state resistance:

RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A)

RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)

• Low input capacitance:

Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V)

• Built-in gate protection diode