2SD1823T中文资料NPN Silicon General Purpose Transistor数据手册Panasonic规格书

描述 Description

For low-frequency amplification■

特性 Features

● High foward current transfer ratio hFE.
● Low collector to emitter saturation voltage VCE(sat).
● High emitter to base voltage VEBO.
● Low noise voltage NV.
● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.