Silicon NPN Power Transistor

FEATURES · High DC current gain · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) · Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2.0A APPLICATIONS · Relay drivers,High speed inverters,converters and other general high-current switching applications

文件：273.94 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

FEATURES · High DC current gain · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) · Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2.0A APPLICATIONS · Relay drivers,High speed inverters,converters and other general high-current switching applications

文件：254.99 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications

文件：233.42 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications

文件：230.43 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1818 is a Low VCE(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor.

文件：196.33 Kbytes 页数：3 Pages

NEC

瑞萨

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low VCE(sat),large current, high PC, complementary to 2SB1217. Applications It is suitable for DC-DC converter, or driver of solenoid or motor.

文件：795.41 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN epitaxial planer type

For general amplification Complementary to 2SB1218A ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the magazine

文件：36.92 Kbytes 页数：2 Pages

PANASONIC

松下

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Complementary to 2SB1218A Low Collector to Emitter Saturation Voltage APPLICATIONS General Purpose Amplification

文件：1.51317 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon NPN Epitaxial Planar Type

Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).

文件：46.34 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Silicon General Purpose Transistor

FEATURES ● High DC Current Gain. ● Low collector to emitter saturation voltage VCE(sat). ● Complementary to 2SB1218A APPLICATION ● General purpose amplification.

文件：148.2 Kbytes 页数：2 Pages

SECOS

喜可士