首页 >2SD1616A连接器>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNEPITAXIALSILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTOR DESCRIPTION *Audiofrequencypoweramplifier *Mediumspeedswitching | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
TO-92Plastic-EncapsulateTransistors FEATURES LowVCE(sat) ComplementaryTransistorwithThe2SB1116 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNSILICONTRANSISTORS DESCRIPTION The2SD1616/2SD1616AaredesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPNTransistors NPNTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
NPNEPITAXIALSILICONTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NPNEPITAXIALSILICONTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●ComplementaryTransistorwithThe2SB1116 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | WINNERJOIN | ||
SILICONTRANSISTORS NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat): VCE(sat)=0.15VTYP.(IC=1.0A,IB=50mA) •LargePTinsmalldimensionwithversatility PT=0.75W,VCEO=50/60V,IC(DC)=1.0A •Complementarytransistorwitht | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSiliconTransistor NPNSiliconTransistor The2SD1616/2SD1616Aaredesignedforusein driverandoutputstagesofAFamplifiergeneral purposeapplication. ThetransistorissubdividedintothreegroupsR,O andY,accordingtoitsDCcurrentgain Onspecialrequest,thesetransistorscanbe manufacturedi | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC |
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