Silicon NPN epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ

文件：57.07 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：254.38 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：273.43 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ

文件：57.07 Kbytes 页数：3 Pages

PANASONIC

松下