For Low-Frequency Amplification

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver.

文件：68.46 Kbytes 页数：3 Pages

PANASONIC

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Power Device - Power Transistors - Others

Panasonic

松下

For Low-Frequency Amplification

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver.

文件：68.46 Kbytes 页数：3 Pages

PANASONIC

松下

For Low-Frequency Amplification

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver.

文件：68.46 Kbytes 页数：3 Pages

PANASONIC

松下

For Low-Frequency Amplification

Panasonic

松下

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 50V 1A TO126B-A1

PANASONIC

松下

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 80V 1A TO126B-A1

PANASONIC

松下