Transistor Silicon NPN Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V (min) • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2219

文件：191.64 Kbytes 页数：5 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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High-Speed Switching Applications DC-DC Converter Applications

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High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

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High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

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Transistor for low frequency small-signal amplification

Feature：High current\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 3 A \nCollector-emitter voltage VCEO 30 V ;

Toshiba

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Transistor for low frequency small-signal amplification

Application Scope：General-purpose\nPolarity：NPN\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 1 A \nCollector-emitter voltage VCEO 50 V ;

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Transistor Silicon NPN Epitaxial Type

Toshiba

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Package：3-SMD，扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 1A UFM

Toshiba Semiconductor and Storage

Package：SC-71；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 160V 1.5A MSTM

Toshiba Semiconductor and Storage