Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.74 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.67 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv

文件：44.61 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.74 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.67 Kbytes 页数：2 Pages

ISC

无锡固电

UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz).

文件：847.12 Kbytes 页数：15 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz).

文件：58.35 Kbytes 页数：15 Pages

SANYO

三洋

UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz).

文件：847.12 Kbytes 页数：15 Pages

SANYO

三洋

UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=12.5dB typ (f=2GHz). • Ultraminiature and thin flat leadless pack

文件：84.65 Kbytes 页数：15 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=12.5dB typ (f=2GHz).

文件：68.37 Kbytes 页数：15 Pages

SANYO

三洋