NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

文件：117.43 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

文件：344.15 Kbytes 页数：14 Pages

RENESAS

瑞萨

TO-3P

SANYO

三洋

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AUK

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TO126

UTC(友顺)

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