首页 >2SC4738-Y,LF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) HighhFE:hFE=120~400 Complementaryto2SA1832F Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications FEATURES ●Highvoltageandhighcurrent. ●HighhFE. ●Complementaryto2SA1832. ●Smallpackage. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SOT-523Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighVoltageandCurrent ●HighDCCurrentGain ●Complementaryto2SA1832 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •HighVoltage:VCEO=50V •HighCurrent:IC=150mA(max) •HighhFE:hFE=120~400 •ExcellenthFELinearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •Complementaryto2SA1832FV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •HighVoltage:VCEO=50V •HighCurrent:IC=150mA(max) •HighhFE:hFE=120~400 •ExcellenthFELinearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •Complementaryto2SA1832FV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications HighVoltage:VCEO=50V HighCurrent:IC=150mA(max) HighhFE:hFE=120to400 ExcellenthFELinearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) Complementaryto2SA1832FT | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:0.15A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | WINNERJOIN | ||
NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to700 •Complementaryto2SA1832 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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