HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f =

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NEC

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR

DESCRIPTION The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC =

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CEL

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

文件：212.22 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR

DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7

文件：202.22 Kbytes 页数：9 Pages

RENESAS

瑞萨

Low Noise, High Gain

DESCRIPTION • Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz APPLICATIONS • Designed for VHF, UHF low noise amplifier.

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ISC

无锡固电

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

DESCRIPTION\nThe 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.FEATURES\n• Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GH • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz\n• High gain : S21e2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz\n• 3-pin super minimold package ;

Renesas

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD

文件：202.22 Kbytes 页数：9 Pages

RENESAS

瑞萨

Package：SC-70，SOT-323；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 7GHZ SC70

CEL

Package：SC-70，SOT-323；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 7GHZ SOT323

CEL

Package：SC-70，SOT-323；包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 7GHZ SOT323

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