Silicon NPN Triple-Diffused Junction Mesa Type

[Panasonic] Silicon NPN Triple-Diffusion Junction Mesa Type High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of hFE

文件：65.77 Kbytes 页数：1 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION • High Speed Switching • High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) • Good Linearity of hFE APPLICATIONS • Designed for high speed switching applications

文件：239.56 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Applications(with Bias Resistance)

Switching Applications (With Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Application · Switching circuits, inverters circuits, inferface circuits, driver circuits.

文件：58.85 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：58.75 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：59.76 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Swicthing circuits, inverter circuits, interface circuits, dirver circuits.

文件：61.31 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：57.95 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. • Small-sized package : SPA. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：57.84 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：58.67 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. • Small-sized package : SPA. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

文件：59.03 Kbytes 页数：2 Pages

SANYO

三洋