NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

文件：121.6 Kbytes 页数：3 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR 860-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

FEATURES • High gain and high power output at 860 MHz Pout = 52 W @ VCC = 28 V, Pin = 10 W, class AB • Push-pull structure allows easy design of wideband amplifier • Internal emitter balance resistor • Internal impedance matching circuit • High reliability due to gold electrodes

文件：175.61 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

FEATURES\n• High gain and high power output at 860 MHz\n  Pout = 52W @ Vcc = 28 V, Pin = 10 W, class AB\n• Push-pull structure allows easy design of wideband amplifier\n• Internal emitter balance resistor\n• Internal impedance matching circuit\n• High reliability due to gold electrodes • High gain and high power output at 860 MHz\n  Pout = 52W @ Vcc = 28 V, Pin = 10 W, class AB\n• Push-pull structure allows easy design of wideband amplifier\n• Internal emitter balance resistor\n• Internal impedance matching circuit\n• High reliability due to gold electrodes;

Renesas

瑞萨

TO-3P

Fuji

富士通

上传：深圳市凌旭科技有限公司

SOT-23

TOSHIBA

东芝

上传：瀚佳科技(深圳)有限公司