首页 >2SC1971功率三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4to5wattsoutputpoweramplifiersinVHFbandapplications. | ELEFLOW eleflow technologies co., ltd. | ELEFLOW | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASI2SC1971isDesignedforRFpoweramplifiersonVHFbandmobileradioapplications. FEATURESINCLUDE: •ReplacesOriginal2SC1971inMostApplications •HighGainReducesDriveRequirements •EconomicalTO-220CEPackage | ASI Advanced Semiconductor | ASI | ||
siliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradio DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION •HighPowerGain- :Gpe≥10dB,f=175MHz,PO=6W;VCC=13.5V •HighReliability APPLICATIONS •DesignedforRFpoweramplifiersonVHFbandmobileradioapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNEPITAXIALPLANARTYPE(forRFpoweramplifiersonVHFbandMobileradioapplications) DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi |
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