首页 >2SB905-O其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-150V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-150V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
PowerAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
PowerAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •ComplementarytoSD1220 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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