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2SB673

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=2000(Min)@IC=-3A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max)@IC=-3A •ComplementtoType2SD633 APPLICATIONS •Highpowerswitchingapplications. •Hammerdrive,pu

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2SB673

SiliconPNPPowerTransistorsnull

SAVANTIC

Savantic, Inc.

2SB673

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •Complementtotype2SD633 APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

2SB673

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=2000(Min)@IC=-3A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max)@IC=-3A •ComplementtoType2SD633 APPLICATIONS •Highpowerswitchingapplications. •Hammerdrive,pu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SB673

2SB673

[Mospec] 7A/100VPNPPowerTransistor

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