首页 >2SB673-Y>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=2000(Min)@IC=-3A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max)@IC=-3A •ComplementtoType2SD633 APPLICATIONS •Highpowerswitchingapplications. •Hammerdrive,pu | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconPNPPowerTransistorsnull | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •Complementtotype2SD633 APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=2000(Min)@IC=-3A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max)@IC=-3A •ComplementtoType2SD633 APPLICATIONS •Highpowerswitchingapplications. •Hammerdrive,pu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
2SB673 [Mospec] 7A/100VPNPPowerTransistor | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC |
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