首页 >2SB1260三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
PowerTransistor(−80V,−1A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
PNPPlastic-EncapsulateTransistor PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
-1A,-80VPNPPlasticEncapsulatedTransistor FEATURES ♦HighbreakdownvoltageandhighcurrentBVCEO=-80V,IC=-1A ♦GoodhFElinearity ♦Complementsto2SD1898 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PowerTransistor(-80V,-1A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
POWERTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
PowerTransistor Features ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanartype ●PNPsilicontransistor | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI |
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