2SA2690中文资料瑞萨数据手册PDF规格书

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION

DESCRIPTION

These products are general purpose transistors designed for use

in audio and radio frequency power amplifiers.

FEATURES

• Suitable for use in driver stage of 50 to 100 W audio amplifiers

and output stage of TV vertical deflection circuit.

• High voltage and high fT

VCEO = 120 V (2SC2690) / 160 V (2SC2690A)

fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)

• Complementary to the 2SA1220 and 2SA1220A PNP transistors.