首页 >2SA1802(TE16L1,NQ)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=200to600(VCE=−2V,IC=−0.5A) :hFE(2)=140(min),200(typ.)(VCE=−2V,IC=−3A) •Lowcollectorsaturationvoltage :VCE(sat)=−0.5V(max)(IC=−3A,IB=−60mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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