PNP Silicon General Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium.

Features

• Reduces Board Space

• High hFE, 210−460 (typical)

• Low VCE(sat), < 0.5 V

• Available in 8 mm, 7−inch/3000 Unit Tape and Reel

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

2SA1774T1G属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的2SA1774T1G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。