首页 >2SA1586-Y(F)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
PNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain HighVoltageandHighCurrent Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SiliconPNPEpitaxial ■Features ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
PNPSiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
PNPSiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent. ●ExcellentHFELinearity. ●HighhFElinearity. ●Complementaryto2SC4116. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification. | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain HighVoltageandHighCurrent. Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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