首页 >2SA1048其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS) AudioFrequencyAmplifierApplications LowNoiseAudioFrequencyApplications •Smallpackage. •Highvoltage:VCEO=−50V(min) •HighhFE:hFE=70~400 •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •Lownoise:NF=0.2dB(typ.),3dB(max) •Complementaryt | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconPNPtransistorinaTO-92PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
PNPPlasticEncapsulatedTransistor FEATURES •SmallPackage •HighVoltage •ExcellenthFELinearity | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
AudioFrequencyAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(PNP) FEATURES ●Highvoltage:VCEO=-50V(Min.) ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(Typ.),10dB(Max.) ●Complementaryto2SC2458 | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
TO-92SPlastic-EncapsulateTransistors RANSISTOR(PNP) FEATURES ●Highvoltage ●HighhFE ●Lownoise ●Complementaryto2SC2458 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RohsCompliant(PSuffixdesignates Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PCM=0.2W •Collectorcurrent:IC=0.15A •ThermalResistanceFromJunctionToAmbient:62 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS) AudioFrequencyAmplifierApplications LowNoiseAudioFrequencyApplications •Smallpackage. •Highvoltage:VCEO=−50V(min) •HighhFE:hFE=70~400 •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •Lownoise:NF=0.2dB(typ.),3dB(max) •Complementaryt | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Plastic-EncapsulateTransistors FEATURES Highvoltage HighhFE Lownoise Complementaryto2SC2458RS | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI |
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