首页 >2SA1015(TE85L)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPSILICONTRANSISTOR 2SA1015isPNPsiliconplanartransistordesignedforaudiofrequencygeneralpurposeamplifierapplicationsanddriverstageamplifierapplications. | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPSiliconPlastic-EncapsulateTransistor Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPTransistors Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PlasticEncapsulateTransistors FEATURES .PowerDissipation PCM:0.2W(Ta=25к) .CollectorCurrent ICM:-0.15A .Collector-BaseVoltage V(BR)CBO:-50V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
AudioFrequencyAmplifierApplicationsLowNoiseAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS) AudioFrequencyAmplifierApplications LowNoiseAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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