首页 >2SA1012G-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPSiliconEpitaxialPlanarTransistor PNPSiliconEpitaxialPlanarTransistor forhighcurrentswitchingapplications. Thetransistorissubdividedintotwogroup,OandY,accordingtoitsDCcurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
PNPPlastic-EncapsulateTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •MountingTorgue:5in-lbsMaximum •Capableof25WattsofPowerDissipation. •Collector-current-5.0AandCollector-baseVoltage-60V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •LeadFreeFinish | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
SiliconPNPTransistors SiliconPNPTransistors ♦Features •WithTO-220package •Complementaryto2SC2562 | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | JMNIC | ||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SD2562 ·Lowsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconPNPPowerTransistor DESCRIPTION ·LowCollectorSaturationVoltage :VCE(sat)=-0.4(V)(Max)@IC=-3A ·HighSwitchingSpeed ·ComplementtoType2SC2562 APPLICATIONS ·Designedforhighcurrentswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGHCURRENTSWITCHINGAPPLICATION FEATURES *LowCollectorSaturationVoltage VCE(SAT)=-0.4V(max.)AtIc=-3A *HighSpeedSwitchingTime:tS=1.0μs(Typ.) *ComplementaryTo2SC2562 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
TRANSISITOR(HIGHCURRENTSWITCHINGAPPLICATIONS) HIGHCURRENTSWITCHINGAPPLICATIONS. ■FEATURES *Lowcollectorsaturationvoltage VCE(SAT)=-0.4V(max.)atIc=-3A *Highspeedswitchingtime:tS=1.0µs(Typ.) *Complementaryto2SC2562 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
POWERTRANSISTORS(5A,50V,25W) 5AMPERESPOWERTRANSISTORS50VOLTS25WATTS | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
TO-220-3LPlastic-EncapsulateTransistors FEATURES HighCurrentSwitchingApplications LowCollectorSaturationVoltage HighSpeedSwithingTime | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TRANSISTOR(PNP) FEATURES ●HIGHCURRENTSWITCHINGAPPLICATIONS. ●LowCollectorSaturationVoltage :VCE(SAT)=-0.4V(MAX)atIC=-3A ●HighSpeedSwithingTime:tstg=1.0us(Typ.) ●Complementaryto2SC2562 | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN |
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