丝印：2PD；Package：SMV；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DF series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving

文件：839.87 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：2PD；Package：DFN4；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of drivi

文件：460.78 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：2PD；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 页数：20 Pages

TOSHIBA

东芝

丝印：AQ；Package：SC-70；NPN general purpose transistor

FEATURES •High current (max. 500 mA) •Low voltage (max. 50 V) •Low collector-emitter saturation voltage (max. 600 mV).

文件：287.21 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AR；Package：SC-70；NPN general purpose transistor

FEATURES •High current (max. 500 mA) •Low voltage (max. 50 V) •Low collector-emitter saturation voltage (max. 600 mV).

文件：287.21 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AS；Package：SOT32；NPN general purpose transistor

FEATURES •High current (max. 500 mA) •Low voltage (max. 50 V) •Low collector-emitter saturation voltage (max. 600 mV).

文件：287.21 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M2；Package：SOT89；20 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：750.75 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZQ；Package：SOT-346；NPN general purpose transistor

DESCRIPTION NPN general purpose transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Available in SOT323 (SC-70) and SOT346 (SC-59) packages • Available in three different DC current gain versions (Q, R, S). APPLICATIONS • General purpose

文件：42.02 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：ZQ；Package：SOT-346；NPN general purpose transistors; 50 V, 100 mA

DESCRIPTION NPN general purpose transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Available in SOT323 (SC-70) and SOT346 (SC-59) packages • Available in three different DC current gain versions (Q, R, S). APPLICATIONS • General purpose switching and a

文件：131.56 Kbytes 页数：8 Pages

恩XP

丝印：ZQ；Package：SOT-346；NPN general purpose transistor

DESCRIPTION NPN general purpose transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Available in SOT323 (SC-70) and SOT346 (SC-59) packages • Available in three different DC current gain versions (Q, R, S). APPLICATIONS • General purpose

文件：48.28 Kbytes 页数：8 Pages

PHI

飞利浦