2N6989中文资料NPN Silicon Switching Quad 50V, 0.8A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for NPN, silicon, switching, 2N6989 and 2N6990 Unitized transistors in a four independent 2N2222A transistor chip array. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/559. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: 14-pin dual-in-line (2N6989), 14-pin flat-pack (2N6990) and 20-pin leadless chip carrier (2N6989U).

简介

2N6989属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由制造生产的2N6989晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。