2N6111中文资料7.0 A, 30 V PNP Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The Power 7A 70 VBipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

特性 Features

• DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
• Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
• High Current GainBandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
• TO-220AB Compact Package
• Pb-Free Packages are Available

简介

2N6111属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6111晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。