2N5415S中文资料Transistor GP BJT PNP 3-Pin 200V, 1A, 0.75W TO-39 Bag数据手册Microchip规格书

描述 Description

This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging.

特性 Features

JEDEC registered 2N5415 through 2N5416 series.JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485
(See part nomenclature for all available options.) RoHS compliant
General purpose transistors for low power applications requiring high frequency switching
Low package profile
Military and other high-reliability applications.Available in TO-205AA (TO-5), UA, U4 and UB surfacemount packages

简介

2N5415S属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N5415S晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。