Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A

This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476. The device package outlines are as follows: similar to TO-18 and surface mount LCC3 UB for all encapsulated device types.;

Microchip

微芯科技

Package：3-SMD，无引线；包装：管件 类别：分立半导体产品 晶体管 - JFET 描述：P CHANNEL JFET

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - JFET 描述：JFET

Microchip

微芯科技

P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screen

文件：56.38 Kbytes 页数：2 Pages

Microsemi

美高森美

P-CHANNEL JFETS - 1

文件：176.73 Kbytes 页数：2 Pages

Solitron

P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screen

文件：56.38 Kbytes 页数：2 Pages

Microsemi

美高森美