NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package

文件：28.64 Kbytes 页数：1 Pages

ASI

isc Silicon NPN Power Transistor

DESCRIPTION • High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA • Low Saturation Voltage • Good Linearity of hFE APPLICATIONS • Designed for general purpose Class C amplifier applications up to 1 GHz

文件：33.36 Kbytes 页数：2 Pages

ISC

无锡固电

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C)

文件：80.82 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

文件：245.31 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商