2N4339分立半导体产品的晶体管-JFET规格书PDF中文资料

2N4339属于分立半导体产品的晶体管-JFET。由威世科技半导体制造生产的2N4339晶体管 - JFET结栅场效应晶体管 (JFET) 是用作电子控制开关、放大器或电压控制电阻器的器件。在栅极端子与源极端子之间施加适当极性的电势差就会增加电流流动的阻力，这意味着源极端子与漏极端子之间通道中流动的电流会更少。由于电荷流过源极与漏极端子之间的半导体通道，因此 JFET 不需要偏置电流。

FEATURES

Low Cutoff Voltage: 2N4338 <1 V

High Input Impedance

Very Low Noise

High Gain: AV = 80 @ 20
A

BENEFITS

Full Performance from Low-Voltage

Power Supply: Down to 1 V

Low Signal Loss/System Error

High System Sensitivity

High-Quality Low-Level Signal

Amplification

APPLICATIONS

High-Gain, Low-Noise Amplifiers

Low-Current, Low-Voltage

Battery-Powered Amplifiers

Infrared Detector Amplifiers

Ultrahigh Input Impedance

Pre-Amplifiers

DESCRIPTION

The 2N4338/4339/4340/4341 n-channel JFETs are designed

for sensitive amplifier stages at low- to mid-frequencies. Low

cut-off voltages accommodate low-level power supplies and

low leakage for improved system accuracy.

The TO-206AA (TO-18) package is hermetically sealed and

suitable for military processing (see Military Information). For

similar products in TO-226AA (TO-92) and TO-236 (SOT-23)

packages, see the J/SST201 series data sheet.