首页 >2N3904F-RTK/H>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
EPITAXIALPLANARNPNTRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
GeneralPurposeTransistor | FS First Silicon Co., Ltd | FS | ||
EPITAXIALPLANARNPNTRANSISTOR GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •Complementaryto2N3906SC. | KECKEC CORPORATION KEC株式会社 | KEC | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-92Plastic-EncapsulateTransistors Features NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications Ascomplementarytype,thePNPtransistor2N3906is Recommended ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistor | FS First Silicon Co., Ltd | FS |
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