2N2905AE3数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators \"M\", \"D\", \"P\", \"L\", \"R\", \"F\", \"G\" and \"H\" are appended to the device prefix to identify devices which have passed RHA requirements.

特性 Features

The device package outline for this specification sheet is similar to TO-39 for all encapsulated device types.

简介

2N2905AE3属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N2905AE3晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。