Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

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CENTRAL

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

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SEMICOA

High Speed Switching Transistor

Features: • PNP silicon planar switching transistors • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics • Switching and linear application DC and VHF amplifier applications Description High Speed Switching Transistors

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MULTICOMP

易络盟

GENERAL PURPOSE AMPLIFIERS TRANSISTORS

GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package. They are intended for high speed switching and general purpose applications. NPN complements are 2N2221 and 2N2221A . Compliance to RoHS

文件：151.29 Kbytes 页数：3 Pages

COMSET

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 页数：2 Pages

MICROSEMI

美高森美

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 页数：2 Pages

MICROSEMI

美高森美

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2906AUBJ) • JANTX level (2N2906AUBJX) • JANTXV level (2N2906AUBJV) • JANS level (2N2906AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

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SEMICOA

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. • Low Collector Output Capacita

文件：51.3 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ● Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ● Excellent DC Current Gain Linearity. ● Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ● Low Collector

文件：54.34 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)