2N2605数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/354. RHA level designators “M”, “D”, “P“, “L”, “R”, “F’, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-46 in accordance with figure 1, UB suffix in accordance with figure 2 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/354.

简介

2N2605属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N2605晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。