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2N2647

Silicon PN Unijuction Transistor

Silicon PN Unijunction Transistor ... designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

文件:133.26 Kbytes 页数:2 Pages

BOCA

博卡

2N2647

MU4893

MU4893

文件:177.54 Kbytes 页数:4 Pages

CENTRAL

2N2647

Transistor Unijunction

Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: • Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity

文件:339.57 Kbytes 页数:2 Pages

MULTICOMP

易络盟

2N2647

SILICON UNIJUNCTION TRANSISTORS

SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is inten

文件:104.99 Kbytes 页数:3 Pages

COMSET

2N2647

SILICON UNIJONCTION TRANSISTORS

[DIGITRON] SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件:54.95 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2N2647

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Silicon Unijunction Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse Voltage. In addition, these devices are m

文件:337.16 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N2647

SILICON UNIJUNCTION TRANSISTOR

SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件:206.02 Kbytes 页数:2 Pages

DIGITRON

2N2651

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

文件:33.79 Kbytes 页数:1 Pages

CENTRAL

2N2652

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

文件:52.73 Kbytes 页数:1 Pages

CENTRAL

2N2652A

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

文件:52.73 Kbytes 页数:1 Pages

CENTRAL

晶体管资料

  • 型号:

    2N2605(A)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_低噪放大 (ra

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    0.03A

  • 最大工作频率:

    >30MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BC214,BC315,BC416,BC560,2N3798,2N3799,2SA970,2SA1016,2SA1038,2SA1039,2SA1136,3CG170A,

  • 最大耗散功率:

    0.4W

  • 放大倍数:

  • 图片代号:

    D-8

  • vtest:

    60

  • htest:

    30000100

  • atest:

    0.03

  • wtest:

    0.4

产品属性

  • 产品编号:

    2N2605

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    300mV @ 500µA,10mA

  • 电流 - 集电极截止(最大值):

    10nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 10mA,5V

  • 工作温度:

    -65°C ~ 200°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-206AB,TO-46-3 金属罐

  • 供应商器件封装:

    TO-46-3

  • 描述:

    TRANS PNP 60V 0.03A TO46-3

供应商型号品牌批号封装库存备注价格
24+
CAN
7000
询价
N/A
24+/25+
20
原装正品现货库存价优
询价
MOTOROLA
24+
CAN3
200
原装现货假一罚十
询价
24+
CAN
200
进口原装正品优势供应
询价
MOTOROLA
专业铁帽
CAN3
200
原装铁帽专营,代理渠道量大可订货
询价
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICROSEMI
25+
TO-46-3
326
就找我吧!--邀您体验愉快问购元件!
询价
TOSHIBA
FBGA
6850
莱克讯每片来自原厂原盒原包装假一罚十价优
询价
MOTOROLA/摩托罗拉
23+
CAN
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多2N26供应商 更新时间2026-3-9 16:30:00