| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon PN Unijuction Transistor Silicon PN Unijunction Transistor ... designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. 文件:133.26 Kbytes 页数:2 Pages | BOCA 博卡 | BOCA | ||
MU4893 MU4893 文件:177.54 Kbytes 页数:4 Pages | CENTRAL | CENTRAL | ||
Transistor Unijunction Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: • Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity 文件:339.57 Kbytes 页数:2 Pages | MULTICOMP 易络盟 | MULTICOMP | ||
SILICON UNIJUNCTION TRANSISTORS SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is inten 文件:104.99 Kbytes 页数:3 Pages | COMSET | COMSET | ||
SILICON UNIJONCTION TRANSISTORS [DIGITRON] SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. 文件:54.95 Kbytes 页数:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A Silicon Unijunction Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse Voltage. In addition, these devices are m 文件:337.16 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
SILICON UNIJUNCTION TRANSISTOR SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. 文件:206.02 Kbytes 页数:2 Pages | DIGITRON | DIGITRON | ||
Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) 文件:33.79 Kbytes 页数:1 Pages | CENTRAL | CENTRAL | ||
Dual Transistors Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power) 文件:52.73 Kbytes 页数:1 Pages | CENTRAL | CENTRAL | ||
Dual Transistors Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power) 文件:52.73 Kbytes 页数:1 Pages | CENTRAL | CENTRAL |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-PNP
- 性质:
低频或音频放大 (LF)_开关管 (S)_低噪放大 (ra
- 封装形式:
直插封装
- 极限工作电压:
60V
- 最大电流允许值:
0.03A
- 最大工作频率:
>30MHZ
- 引脚数:
3
- 可代换的型号:
BC214,BC315,BC416,BC560,2N3798,2N3799,2SA970,2SA1016,2SA1038,2SA1039,2SA1136,3CG170A,
- 最大耗散功率:
0.4W
- 放大倍数:
- 图片代号:
D-8
- vtest:
60
- htest:
30000100
- atest:
0.03
- wtest:
0.4
产品属性
- 产品编号:
2N2605
- 制造商:
Microchip Technology
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
卷带(TR)
- 晶体管类型:
PNP
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
300mV @ 500µA,10mA
- 电流 - 集电极截止(最大值):
10nA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
100 @ 10mA,5V
- 工作温度:
-65°C ~ 200°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-206AB,TO-46-3 金属罐
- 供应商器件封装:
TO-46-3
- 描述:
TRANS PNP 60V 0.03A TO46-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
CAN |
7000 |
询价 | ||||
N/A |
24+/25+ |
20 |
原装正品现货库存价优 |
询价 | |||
MOTOROLA |
24+ |
CAN3 |
200 |
原装现货假一罚十 |
询价 | ||
24+ |
CAN |
200 |
进口原装正品优势供应 |
询价 | |||
MOTOROLA |
专业铁帽 |
CAN3 |
200 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
25+ |
TO-46-3 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TOSHIBA |
FBGA |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
询价 | |||
MOTOROLA/摩托罗拉 |
23+ |
CAN |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 |

