2N2535N3中文资料N-Channel Depletion-Mode Vertical DMOS FETs数据手册Microchip规格书

描述 Description

Advanced DMOS Technology
Not recommended for new designs. For products in TO-92 (N3) package and TO-243AA (N8) package, please use DN3535 or DN3545 instead.These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

特性 Features

❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakageApplications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom