2EDRX259X中文资料英飞凌数据手册PDF规格书

特性 Features

• 2-channel isolated gate driver for Si and SiC

MOSFETs and GaN HEMTs power switches

• Fast input-to-output propagation (38 ns) with

excellent stability (+9/-5 ns)

• Strong output stage: 5 A/9 A source/ sink

• Fast output clamping for VDDA/B < UVLO

• Fast UVLO recovery time (< 2 μs)

• Four VDDA/B UVLO options: 4 V, 8 V, 12 V, 15 V

• CMTI > 150 V/ns

• Available in 16/14-pin 300 mil DSO package