2ED21834S06J集成电路（IC）的栅极驱动器规格书PDF中文资料

2ED21834S06J属于集成电路（IC）的栅极驱动器。由英飞凌科技股份公司制造生产的2ED21834S06J栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

Description

The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Features

• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

• Negative VS transient immunity of 100 V

• Floating channel designed for bootstrap operation

• Operating voltages (VS node) upto + 650 V

• Maximum bootstrap voltage (VB node) of + 675 V

• Integrated ultra-fast, low resistance bootstrap diode

• Logic operational up to –11 V on VS Pin

• Negative voltage tolerance on inputs of –5 V

• Independent under voltage lockout for both channels

• Schmitt trigger inputs with hysteresis

• 3.3 V, 5 V and 15 V input logic compatible

• Maximum supply voltage of 25 V

• Dual package options of DSO-8 and DSO-14

• High and low voltage pins separated for maximum creepage and

   clearance (2ED21814S06J version)

• Separate logic and power ground with the 2ED21814S06J version

• RoHS compliant