29LV650数据手册Fujitsu中文资料规格书

描述 Description

DESCRIPTION
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCCsupply. 12.0 V VPP and 5.0 V VCCare not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls.
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan dard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Typically, each sector can be programmed and verified in about 0.5 seconds.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the factory.
Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by DataPolling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode. The devices electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words are programmed one word at a time using the EPROM programming mechanism of hot electron injection.