29F0408RPFE中文资料MAXWELL数据手册PDF规格书

DESCRIPTION:

Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit.

FEATURES:

• Single 5.0 V supply

• Excellent Single Event Effect

· - SEL

TH: > 60 MeV/mg/cm2

· - SEU

TH: = 37 MeV/mg/cm2

- SEU saturated cross section: 2E-6 cm2/bit

• Organization:

- Memory cell array: (4M + 128k) bit x 8bit

- Data register: (512 + 16) bit x 8bit

• Automatic program and erase

- Page program: (512 + 16) Byte

- Block erase: (8K + 256) Byte

- Status register

• 528-Byte page read operation

- Random access: 10 µ s (max)

- Serial page access: 50 ns (min)

• Fast write cycle time

- Program time: 250 µ s (typ)

- Block erase time: 2 ms (typ)

• Command/address/data multiplexed I/O port

• Hardware data protection

- Program/erase lockout during power transitions

• Reliable CMOS floating-gate technology

- Endurance: 1,000,000 program/erase cycles

- Data retention: 10 years

• Command register operation

• 44 pin flat package