PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

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ONSEMI

安森美半导体

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

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ONSEMI

安森美半导体

丝印：2907A；Package：SOT-223；NPN Silicon Planar Epitaxial Transistor

PNP Silicon Planar Epitaxial Transistor P/b Lead(Pb)-Free

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SKTECHNOLGYSHIKE Electronics

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