28LV010RT2DB-25中文资料Maxwell数据手册PDF规格书

DESCRIPTION:

Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster.

FEATURES:

• 3.3V low voltage operation 128K x 8 Bit EEPROM

• RAD-PAK® radiation-hardened against natural space radiation

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SELTH > 84 MeV/mg/cm2

- SEUTH > 37 Mev/mg/cm2 (read mode)

- SEU saturated cross section = 3E-6 cm2 (read mode)

- SEUTH = 11.4 Mev/mg/cm2 (write mode)

- SEU saturated cross section = 5E-3 cm2 (write mode) with hard errors

• Package:

- 32 Pin RAD-PAK® flat pack

- 32 Pin RAD-PAK® DIP

- JEDEC-approved byte-wide pinout

• Address Access Time:

- 200, 250 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data retention

• Page write mode:

- 1 to 128 bytes

• Automatic programming

- 10 ms automatic page/byte write

• Low power dissipation

- 20 mW/MHz active current (typ.)

- 72 µ W standby (maximum)