28C64中文资料SYC数据手册PDF规格书

特性 Features

• Fast Read Access Time – 150 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

– 40 mA Active Current

– 100 μA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

• Single 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

描述 Description

The AT28C64B is a high-performance electrically-erasable and programmable read

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 150 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100 μA.

(continued)