27C16

16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified; Access time down to 450 ns\nLow CMOS power consumption\n   Active Power: 26.25 mW max\n   Standby Power: 0.53 mW max (98% savings)\nPerformance compatible to NSC800TM CMOS microprocessor\nSingle 5V power supply\nPin compatible to MM2716 and higher density EPROMs\nStaticÐno clocks required\nTTL compatible inputs/outputs\nTRI-STATEÉoutput\nWindowed DIP Package\nSpecifications guaranteed over full military temperature range (-b55°C to +125°C);

General Description\nThe 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements.

27C16

16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

27C160

16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM

DESCRIPTION TheM27C160isa16MbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedformicroprocessorsystemsrequiringlargedataorprogramstorageandisorganisedaseither2Mbitwordsof8bitor1Mbitwordsof16bit.The

27C1610-10

16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

GENERALDESCRIPTION TheMX27C1610isa16M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas2Mx8or1Mx16andhasastaticstandbymode,andfeaturesfastprogramming.Forprogrammingoutsidefromthesystem,existingEPROMprogrammersmaybeused.TheMX27C1610supportsainte

27C1610-12

16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

GENERALDESCRIPTION TheMX27C1610isa16M-bit,OneTimeProgrammableReadOnlyMemory.Itisorganizedas2Mx8or1Mx16andhasastaticstandbymode,andfeaturesfastprogramming.Forprogrammingoutsidefromthesystem,existingEPROMprogrammersmaybeused.TheMX27C1610supportsainte

27C16A-15IL

16K (2K x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

27C16A-15IP

16K (2K x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

27C16A-15ITS

16K (2K x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

27C16A-15IVS

16K (2K x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem

27C16A-15L

16K (2K x 8) CMOS EEPROM

DESCRIPTION TheMicrochipTechnologyInc.28C16AisaCMOS16Knon-volatileelectricallyErasablePROM.The28C16AisaccessedlikeastaticRAMforthereadorwritecycleswithouttheneedofexternalcomponents.Duringa“bytewrite”,theaddressanddataarelatchedinternally,freeingthem