Package：16-TSSOP（0.173"，4.40mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 时钟发生器，PLL，频率合成器 描述：IC CLK SYNTH VCXO 200MHZ 16TSSOP

RENESAS

瑞萨

Package：16-TSSOP（0.173"，4.40mm 宽）；包装：管件 类别：集成电路（IC） 时钟发生器，PLL，频率合成器 描述：IC CLK SYNTH VCXO 200MHZ 16TSSOP

RENESAS

瑞萨

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

文件：31.65 Kbytes 页数：1 Pages

PANASONIC

松下

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

文件：226.31 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

文件：25.78 Kbytes 页数：2 Pages

NTE